40V Single N-Channel Logic Level StrongIRFET™ Power MOSFET in a TO-247 package. Low. The StrongIRFET™ power MOSFET family is optimized for low R DS (on) and high current capability. 7mOhms 108nC datasheet, inventory, & pricing. rr) RRS140P03HZGPch -30V -14A Power MOSFET. 6 Electrical characteristics 31 DESCRIPTION. , El Segundo, California 90245, USA Tel: (310) 252-7105. Low Capacitance to Minimize Driver Losses. 6 A, VGS = 0 V b-- 2. 5 V Body diode reverse recovery time trr TJ = 25 °C, IF = 5. Part Number. Shipping†. 5 V gate-drive C8 Capacitor 1 0. 3 5. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. SO−8 FL (Pb−Free) 1500 / Tape & Reel. 1 2. Ideal for switching applications. 2 A Pulsed diode forward current a ISM-- 37 Body diode voltage VSD TJ = 25 °C, IS = 9. com1HEXFET® Power MOSFETSDGPD -97363IRLB3034PbFGD Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. 1. 2V, you may experience higher resistance than shown. Mar 11, 2022 · Marking : 6426. International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Tools. • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness. 5VRon(max)= 2mΩ, Ciss= 10315pF, TO263, Infineon IRLB3034PBF 40V Single N-Channel HEXFET Power MOSFET Components datasheet pdf data sheet FREE from Datasheet4U. This device is well suited for Power Management and load switching applications common in Notebook Computers and Feb 28, 2020 · The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. These Devices are Pb−Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications Requiring. 9 A, dI/dt = 100 A/μs - 170 340 ns Body diode reverse recovery charge Qrr-1. 8 8. Typical Applications. IRLP3034. Description. Size:352K aosemi. Similar Part No 30V, 13A, Power MOSFET WNM3032: 1Mb / 8P: Single N-Channel, 30V, 9. IRLS3034-7P. (TR) is a fixed capacitance that gives the same charging timeas Coss while VDS is rising from 0 to 80% VDSS. IRLB3034. IRLB3034PBF is 40V single N channel HEXFET power MOSFET in TO-220AB package. Figure 12. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Transistor Type: N Channel. NVF Prefix for Automotive and Other Applications Requiring. The US3034 IC provides an 8 pin low cost switching controller with true short circuit protection all in a compact 8 pin surface mount package, providing a low cost switching solution for dual supply processor applications that require switching regulator for the 3. 12 V, but have been optimized for high current multi−phase buck regulators that convert 12 V rail directly to the core voltage required by complex logic chips. They were designed for use in applications IRLB3034 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package. 極めて低いオン抵抗に加え、高速スイッチング対応で幅広い用途に適しています。. 1 Introduction 18 1. Overview. 2 V 4. They can be used in most applications requiring up to 500 This product has been designed and qualified for the Industrial market. the end of the data sheet. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Jun 7, 2024 · IRLS3034-7PPBF Infineon Technologies MOSFET 40V 1 N-CH HEXFET 1. 3 Results. 1msec. 002 ohm for the resistance. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Optimized Gate Charge to Minimize Switching Losses. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer MOSFET symbol showing the integral reverse p - n junction diode-- 9. • Lead-Free. These Devices are Pb−Free and are RoHS Compliant. 5 V gate-drive voltage. Gea t (Pin 1) Drain (Pin 2) Source (Pin 3) Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 60 V Qg Gate Charge Total (10V) 19 nC Qgd Gate Charge Gate-to-Drain 3. RDS(on) Logic Level Gate Drive. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. 3 μC N-Ch 30V Fast Switching MOSFETs UD3008: 727Kb / 4P: N-Ch 30V Fast Switching MOSFETs uPI Group Inc. 5V. AON632430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS (ON) ID (at VGS=10V) 85A Low Gate Charge RDS (ON) (at VGS=10V) . 5mW 100% UIS Tested 100% R g Tested Symbol V DS V GS I DM I AS, I AR E AS, E AR V DS Spike V SPIKE T J, T STG Symbol t ≤ 10s Steady-State Steady-State RqJC Power Dissipation A Maximum Junction-to 01/14/09www. In the data sheet for the mosfet, you'll see a value RDS ON. This is the on state resistance of the mosfet. • Enhanced body diode dV/dt and dI/dt Capability. Hello everybody! I have been trying to fit a 3034 mosfet into my tokyo marui g18c aep. WNM3034 Datasheet (HTML) - Will Semiconductor Ltd. 88 μC The NCP3420 are single phase MOSFET drivers designed for driving two N−channel MOSFETs in a synchronous buck converter topology. Title. AON7534 Datasheet: Datasheets: 2016-04-25: PDF: AON7534 Marking IRF530N Product details. 2 days ago · 3034 Keystone Electronics Coin Cell Battery Holders COIN CELL RETAINER datasheet, inventory, & pricing. 1. 5V) 5. 53 1. 8 2. IR WORLD HEADQUARTERS: 101N. 0 A Pulsed diode forward current a ISM-- 36 Body diode voltage VSD TJ = 25 °C, IS = 9. N-Channel MOSFET. QM3016M6: 184Kb / 4P: N-ch 30V Fast Switching MOSFETs QM3024M3: 210Kb / 4P: N-Ch 30V Fast Switching MOSFETs QM3052M6: 228Kb / 5P: N-Ch 30V Fast Switching MOSFETs QM3010D: 236Kb / 4P: N-Ch 30V Fast Switching MOSFETs PACELEADER INDUSTRIAL: PKN3502 IRLB3034PBF Datasheet HEXFET Power MOSFET - International Rectifier High Efficiency Synchronous Rectification in SMPS, IRLB3034PBF_15 IRLB3034 Datasheet, PDF Mouser offers inventory, pricing, & datasheets for MOSFET. 3V supply such as the applications with AGP on board. These characteristics make the SD2942 ideal for 50 V DC very high power applications up to 250 MHz. 44 0. 3rd generation SiC MOSFET technology. strip-based process. Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www. Open your favorite ohm's law calculator, enter 80A for the current (like mentioned in your post) & 0. Used with permission from SCILLC dba ON Semiconductor. Dynamic dv/dt Rating 1. 01/09. 2nC Features. This integrated circuit can be damaged by ESD. 30V N-Channel MOSFET. com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Qualification Standards can be found on IR’s Web site. TO-220AB. Parametrics. IRLB3034PbF. DC. Low RDS(on) High Current Capability. The comprehensive portfolio addresses a broad range of Features. IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 93 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery, DC−DC Converters ixys. Data Sheet Buy Sample. Benefits. Ab so lu te Ma ximu m R ati ngs. Low RDS(on) to Minimize Conduction Losses. 2 TJ=125°C 6. These are N-Channel power MOSFETs manufactured using the MegaFET process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing Jun 30, 2012 · HEXFET®シリーズのNchパワーMOSFETです。. Typical COSS Stored EnergyFig 9. Description: HEXFET Power MOSFET. Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified. l Enhanced body diode dV/dt and dI/dt Capability. 8 A, 20 m Description This P−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. 7mΩ, 4. , El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www. 3 7. TAC Fax: (310) 252-7903 Visit us at www. ・Vthが WST3034 Datasheet (HTML) - Shenzhen Guan Hua Wei Ye Co. • Superior R*Q at 4. RJP3034 Datasheet. 60V LOGIC N-Channel MOSFET. AOS provides a wide range of power management solutions for applications in consumer electronics Jun 7, 2024 · IRLS3034-7PPBF Infineon Technologies MOSFET 40V 1 N-CH HEXFET 1. Typical Source-Drain DiodeForward VoltageFig 11. 6 A Pulsed diode forward current a ISM-- 20 Body diode voltage VSD TJ = 25 °C, IS = 5. 2 A, dI/dt = 100 A/μs b - 110 260 ns Body diode reverse recovery charge Qrr - 0. Drain-to-Source Breakdown VoltageFig 7. Description: PNP Epitaxial Planar Silicon Transistor 50V / 3A High-Speed This product has been designed and qualified for the Industrial market. The 6426 mosfet combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS (ON). IRF740 Product details. aon7934. Logic level : Optimized for 10 V gate-drive voltage (called normal level), and capable of being driven at 4. 5Vにおいても極めて低いオン抵抗. 8mm of creepage distance between drain and source. IRLB3034 Datasheet. Part Number: AON6426. 6 A, dI/dt = 100 A/μs b - 100 200 ns Body diode reverse recovery charge Qrr - 0. 7mΩ. 047mF for 3034 , 0. 5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS (ON) (at VGS=10V) . ・ロジックレベル駆動に最適化. 1 a : FDMS86180 data sheet. 40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package. RJP3034 Datasheet pdf, RJP3034 PDF Datasheet, Equivalent, Schematic, RJP3034 Datasheets, RJP3034 Wiki, Transistor, Cross Reference, PDF Download,Free Search Site, Pinout International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Manufacturer: Renesas Technology Corp. 3034 MOSFET. IRLB3034PBF Datasheet. 3 Ordering information 21 1. Alpha & Omega Semiconductors. MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1. Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. 0 A, VGS = 0 V b-- 2. Max Gate to Source Voltage Should Be: ± 20V. Note: For the applications where it is desirable to eliminate the heat sink, the IRL3103S for Q2 and AON7934 Datasheet (PDF) . • Very Low RDS (ON) at 4. 7mOhm 108nC datasheet, inventory, & pricing. Applications. Size:546K 1. IRLB3034 datasheet, IRLB3034 pdf, IRLB3034 data sheet, datasheet, data sheet, pdf, International Rectifier, 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Mar 22, 2021 · A data sheet for an E-MOSFET, the FDMS86180, is shown in Figure 12. TT3034 Datasheet. 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package. Part # Jun 8, 2022 · Features / Technical Specifications: Package Type: TO-220AB. This is an N-channel, high power device using trench construction. Features. 71 1 V IS 20 A Chapter 1: Understanding power MOSFET data sheet parameters Application Note: AN11158 1. 4 1. 28 This Power MOSFET is the latest development of STMicroelectronics unique “single feature sizeTM” Internal schematic diagram. 233 Kansas St. The SD2942 offers 25% lower RDS(ON) than industry standard and 20% higher power saturation than ST SD2932. LIMITED BY PACKAGE. 07/2010. The company was founded in 1995 and has its headquarters in San Jose, California. Coss eff. 002 ohms). Datasheet: 2MbKb/24P. 2 Data sheet technical sections 18 1. Jun 11, 2024 · IRLB3034PBF Infineon Technologies MOSFET MOSFT 40V 343A 1. After burning out, there was resistance through the mosfet as the rof MOSFET symbol showing the integral reverse p - n junction diode-- 9. Max Pulsed Drain Current is: 1372A. AONS32306. This technology matches and improves the performances compared with standard parts from various sources. 5. IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power Oct 9, 2014 · If you look at the IRLB3034PbF data sheet there are two listings for RDS on, one with V GS at 10V and another at 4. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and Device. Fast intrinsic diode with low reverse recovery (Q. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage ±20 V ID Continuous Drain Current (Package limited) 50 A Continuous Drain Current (Silicon limited), TC = 25°C 56 Continuous Drain Current (Silicon limited), TC = 100°C 39 IDM Pulsed Drain Current (1) 127 A PD All the part names for which the file irlb3034pbf. Manufacturer: Sanyo Semicon Device. 20; 3,690 In Stock; NRND; Mfr. 1 Product profile 18 1. IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Description: Renesas Transistors/Thyristors/Triacs Status List. Package. 5 Thermal characteristics 30 1. 2 Pinning information 21 1. 6 mΩ gFS 67 S VSD 0. ・鉛フリー. 5 V gate drive voltage. Tj = 175°C. , Ltd: Similar Part No. October, 2023 − Rev. 4 nC • Low Thermal Resistance Q gd Gate Charge Gate to Drain 1. 2. 2 A, VGS = 0 V b--1. 4 Limiting values 21 1. - WST3034 N-Ch MOSFET WSD4070DN: 1Mb / 7P: N-Ch MOSFET WSD30140DN56: 873Kb / 6P: N Manufacture Infineon; Parts: IRLS3034(I) Description: MOSFET(Si) N, IRLS3034(I), 343A, 40VDS, 10VRon(max)= 1. This 7. Skip to Main Content +49 (0)89 520 462 110 . 3034A Datasheet pdf, 3034A PDF Datasheet, Equivalent, Schematic, 3034A Datasheets, 3034A Wiki, Transistor, Cross Reference, PDF Download,Free Search Site, Pinout 30V N-Channel MOSFET General Description Product Summary V DS I D (at V GS =10V) 30A R DS(ON) (at V GS =10V) < 8mW R DS(ON) (at V GS =4. High-speed switching with low capacitances. Maximum Drain Current vs. Contact Mouser (Europe) +49 (0)89 520 462 110 | Feedback. ・ゲート電圧4. Failure to observe proper handling and installation procedures can cause damage. IRLS3034. Manufacturer: International Rectifier. ESD damage can range from subtle performance degradation to complete device failure. IRLB3034PbF2www. IRLS3034PBF Infineon Technologies MOSFET 40V 1 N-CH HEXFET 1. 6A , Power MOSFET WNM3032-8 MOSFET – P-Channel, POWERTRENCH-30 V, -8. N-Channel 60 V, Power MOSFET 220 A, 3. 4m 175C Operating Temperature ID (Silicon Limited) 380A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T IRLB3034PbF, HEXFET Power MOSFET. AUTOMOTIVE GRADE AUIRLS3034-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS (on) typ. 1 nC RDS(on) Drain-to-Source On-Resistance VGS BS170, MMBF170. One of the first things that might jump out is the “100% RoHS Compliant” green leaf logo in Alpha & Omega Semiconductors (AOS) is a global semiconductor company that specializes in the design and manufacture of power management integrated circuits (ICs). Optimized package with separate driver source pin. This higher resistance will lead to more heat dissipation of the MOSFET. This product has been designed and qualified for the Industrial market. Pch -30V -14A Power MOSFET. 6 6. Part #: IRLB3034PBF. 12/2008. 30 V, 48 A. Maximum Safe Operating AreaFig 10. NTMFS4C10NT1G. Help, 3034 mosfet keeps burning out. • Optimized for Logic Level Drive. For the 3034, the RDS ON is 2 milliohms (0. comSDG Pulse width ≤ 400µs; duty cycle ≤ 2%. IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power Tc = 25°C. 8 V Body diode reverse recovery time trr TJ = 25 °C, IF = 9. (ER) is a fixed capacitance that gives the same energy as Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and AON6324 Datasheet (PDF) . The NCP3420 will operate from 5 V or. 3034 Datasheet (PDF) MOSFET MOSFET BVDSS: 25V-30V. Max Voltage Applied From Drain to Source: 40V. RRS140P03HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Manufacturer. Product qualification according to JEDEC standard. comFig 8. Symbol Parameter Units. It worked for like the first 5 magazines before i reconnected the battery and it burned out and started going full auto without me pulling the trigger. Table 1: Device summary. com for sales contact information. 4mOhms 120nC datasheet, inventory, & pricing. AUIRLS3034 Infineon Technologies MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET datasheet, inventory, & pricing. • Latest Advanced Trench Technology • Low RDS (ON) • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) 30V, N-ChannelNexFET™ Power MOSFETs Check for Samples: CSD17302Q5A 1FEATURES PRODUCT SUMMARY 2• Optimized for 5V Gate Drive • Ultralow Q VDS Drain to Source Voltage 30 V g and Qgd Qg Gate Charge Total (4. Logic level : Optimized for 10 V gate drive voltage, capable of 4. The SD2942 is a gold metallized N-channel MOS field-effect RF power transistor. 40V Logic Level Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package. SOA. Size:615K 1. 10. 047 Ohm, Logic Level N-Channel Power MOSFETs. FQP30N06L. Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. MOSFET symbol showing the integral reverse p - n junction diode-- 5. May 2001. This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. Case Temperature Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. . 6mΩ, 60V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Datasheet: 41Kb/4P. 0m Logic Level Gate Drive max. 1 12. Part #: RJP3047. Function: 30V, N-Channel MOSFET (Transistor) Package: DFN5X6 Type. Semiconductor Components Industries, LLC, 2015. TT3034 Control Transformer Components datasheet pdf data sheet FREE from Datasheet4U. N-Channel Power MOSFET. 0 m. The devices are ideal for low frequency applications requiring performance and ruggedness. Skip to Main Content (800) 346-6873 IRLB3034PBF Infineon Technologies MOSFET MOSFT 40V 343A 1. pdf. com ) Image. Manufacturer: Alpha & Omega Semiconductor ( aosmd. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant. . Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*. Optimized for 5 V, 12 V Gate Drives. • Fully Characterized Capacitance and Avalanche SOA. Optimized for broadest availability from distribution partners. The comprehensive portfolio addresses a broad range of International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Single Pulse. High blocking voltage with low on-resistance. If your design simply using the battery voltage to trigger the gate, 4. Datasheet: 297Kb/8P. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, DC motor drive, hard switched and high frequency circuits. 5 mΩ How to find the substitute for MOSFET LIST Last Update. 5V) < 10. 5V VGS. Low Voltage MOSFETs (12V - 30V) Status: Not for New Designs. AON793430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS (on) at 4. Max Drain to Source Resistance in ON State (RDS on): 1. pdf is a datasheet 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package: 2: IRLB3034PBF: MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Smart Filtering As you select one or more parametric filters below, Smart Filtering will instantly disable any unselected values that would cause no results to be found. Documents. ・アバランシェ耐量保証. 10msec. 100% Avalanche Tested. Max Continues Drain Current is : 195A. 特長. 1a 12. irf. Max Power Dissipation is: 375W. RRS140P03HZG. These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. 7mOhm 108nC datasheet, inventory & pricing. I D @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) I D @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) This product has been designed and qualified for the Industrial market. A Pch -30V MOSFET with ESD protection diode is included in the SOP8 package. 2 nC • Avalanche Rated V GS = 3V 9. auirls3034-7p. This device is ideal for load. CPU Power Delivery. General Description. Products (7) Datasheets; MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET AUIRLS3034-7TRL; Infineon Technologies; 1: $6. 100?sec. IRLB3034PbF4www. Part #: TT3031NP. Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Logic level : Optimized for 10 V gate-drive voltage (called normal level), and capable of being driven at 4. 1mF for IRU3033 C6 Capacitor 1 4700pF for IRU3034, open for IRU3033 HS1 Heat Sink 1 For MOSFET, 577002 Aavid HS2 Heat Sink 1 For Schottky Diode, 577002 Aavid *R4 is a parallel combination of R4A and R4B. IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power 30A, 60V, ESD Rated, 0. com Electronic Components Datasheet Search English Chinese: German : Japanese 30V, 13A, Power MOSFET WNM3030-8/TR: 1Mb / 8P: Single N-Channel, 30V, 13A, Power MOSFET AONS32306. 04/2012. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices. 0V Body diode reverse recovery time trr TJ = 25 °C, IF = 5. View IRLB3034PbF from Infineon Technologies Americas Corp at DigiKey. The company was founded in 1947 and was headquartered in El Segundo, California. l Lead-Free. exieqyykuvlwzbexkitf